DESIGN AND DEVELOPMENT OF ENHANCED MEMORY RELIABILITY AGAINST MULTIPLE CELL UPSETS USING DMC

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S Gurudas Singh
R Arun Kumar

Abstract

Transient multiple cell upsets (MCUs) are beginning to seriously affect the reliability of memories when they are exposed to radiation settings. More complex error correction codes (ECCs) are often used to protect memory and prevent data corruption caused by MCUs; nevertheless, their primary drawback is an increase in delay overhead. Recently, matrix codes (MCs) based on Hamming codes have been proposed for memory protection. The two error correction codes and the fact that not all situations lead to an improvement in mistake correction skills are the main issues. This work proposes a revolutionary decimal matrix code (DMC) based on the divide-symbol to provide better memory reliability with minimal delay overhead. The proposed DMC uses the decimal algorithm to provide the maximum amount of error detection capability. Furthermore, to minimize the area overhead of extra circuits without interfering with the encoding and decoding processes, it is advised to implement the encoder-reuse method (ERT)

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How to Cite
Singh, S. G. ., & Kumar, R. A. . (2019). DESIGN AND DEVELOPMENT OF ENHANCED MEMORY RELIABILITY AGAINST MULTIPLE CELL UPSETS USING DMC. Turkish Journal of Computer and Mathematics Education (TURCOMAT), 10(3), 1620–1628. https://doi.org/10.61841/turcomat.v10i3.14579
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References

D. Radaelli, H. Puchner, S. Wong, and S.

Daniel, “Investigation of multi-bit upsets in a 150

nm technology SRAM device,” IEEE Trans. Nucl.

Sci., vol. 52, no. 6, pp. 2433–2437, Dec. 2005.

E. Ibe, H. Taniguchi, Y. Yahagi, K. Shimbo, and

T. Toba, “Impact of scaling on neutron induced soft

error in SRAMs from an 250 nm to a 22 nm design

rule,” IEEE Trans. Electron Devices, vol. 57, no. 7,

pp. 1527–1538, Jul. 2010.

C. Argyrides and D. K. Pradhan, “Improved

decoding algorithm for high reliable reed muller

coding,” in Proc. IEEE Int. Syst. On Chip Conf.,

Sep. 2007, pp. 95–98.

A. Sanchez-Macian, P. Reviriego, and J. A.

Maestro, “Hamming SEC-DAED and extended

hamming SEC-DED-TAED codes through selective

shortening and bit placement,” IEEE Trans. Device

Mater. Rel., to be published.

S. Liu, P. Reviriego, and J. A. Maestro,

“Efficient majority logic fault detection with

difference-set codes for memory applications,”

IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,

vol. 20, no. 1, pp. 148–156, Jan. 2012.

M. Zhu, L. Y. Xiao, L. L. Song, Y. J. Zhang,

and H. W. Luo, “New mix codes for multiple bit

upsets mitigation in fault-secure memories,”

Microelectron. J., vol. 42, no. 3, pp. 553–561, Mar.

R. Naseer and J. Draper, “Parallel double error

correcting code design to mitigate multi-bit upsets

in SRAMs,” in Proc. 34th Eur. Solid-State Circuits,

Sep. 2008, pp. 222–225.

G. Neuberger, D. L. Kastensmidt, and R. Reis,

“An automatic technique for optimizing ReedSolomon codes to improve fault tolerance in

memories,” IEEE Design Test Comput., vol. 22, no.

, pp. 50–58, Jan.–Feb. 2005.

P. Reviriego, M. Flanagan, and J. A. Maestro,

“A (32,45) triple error correction code for memory

applications,” IEEE Trans. Device Mater. Rel., vol.

, no. 1, pp. 101–106, Mar. 2012.

S. Baeg, S. Wen, and R. Wong, “Interleaving

distance selection with a soft error failure model,”

IEEE Trans. Nucl. Sci., vol. 56, no. 4, pp. 2111–

, Aug. 2009.

K. Pagiamtzis and A. Sheikholeslami, “Content

addressable memory (CAM) circuits and

architectures: A tutorial and survey,” IEEE J. SolidState Circuits, vol. 41, no. 3, pp. 712–727, Mar.

S. Baeg, S. Wen, and R. Wong, “Minimizing

soft errors in TCAM devices: A probabilistic

approach to determining scrubbing intervals,” IEEE

Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 4,

pp. 814–822, Apr. 2010.

P. Reviriego and J. A. Maestro, “Efficient error

detection codes for multiple-bit upset correction in

SRAMs with BICS,” ACM Trans. Design Autom.

Electron. Syst., vol. 14, no. 1, pp. 18:1–18:10, Jan.